Magnetic field effect transistor
2011
Disclosed is a magnetic field effect transistor. The magnetic field effect transistor comprises: a current control part; and a magnetic-field applying part. The current control part comprises: a plurality of electrodes; and a current-draining-substance region which is located between the plurality of electrodes, and changes the amount of current flowing between the electrodes in a magnetic field applied from the outside. The magnetic-field applying part applies, in the current-draining-substance region, a magnetic field which is generated in the magnetized state of a predetermined substance that changes in accordance with external input. Because the current is controlled through the use of the magnetic field, the invention is capable of rapid operation without the need for any charging time, and since the magnetized state of the substance is changed and the magnetic field is supplied in accordance with the external input, the results of computations can be stored even without supplying an external power source.
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