Characteristic exciton properties of ZnS and ZnSe films

Abstract Epitaxial layers of ZnSe and ZnS have been grown on GaAs (100) substrates by low-pressure metal-organic vapor phase epitaxy (MOVPE) and etched out from their substrates. The optical quality of the layers has been investigated at 2 K by low-intensity reflection, transmission and photoluminescence measurements. At high excitation intensities, the near-band-edge luminescence has been determined in both ZnS and ZnSe samples. Exciton and biexciton contributions have been studied.