Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs

As dimensions of metal oxide semiconductor field effect transistors (MOSFETs) are reduced, short-channel effects become the fundamental limitation. Recently, the interband tunnel field-effect transistor (TFET) has been proposed as a possible candidate for the next generation switch because of its intrinsic low subthreshold swing, low off-state leakage, and low static power dissipation [1]. In one of its realization schemes [2], field modulation of a heavily doped thin-body channel is required, sweeping the Fermi level in the channel above and below the valence band edges (for p+ channel and conduction band for n+ channel). In this work, we investigated the field modulation in p+InGaAs using atomic layer deposition (ALD) oxides as gate dielectrics. InGaAs was chosen as the channel material for its' small bandgap and carrier effective mass [3].