The New Method of Semiconductor Devices Production by Wafers Direct Bonding

Problems of a new technological process of multilayer silicon structure formation by direct bonding of silicon wafers (SDB) are reviewed. The main accent is made on the consideration of possible mechanisms of semiadhesive bonding of silicon surfaces at low-temperature and high-temperature steps of the bonding process. Issues regarding the quality of multilayer structures such as absence of voids, crystal structure peculiarities of the bonding interface, and electrical properties of the device layers are presented. Examples of applications of the SDB multilayer structures in device fabrication are shown. The review includes both the consideration of principal reports on the subject and the author's experimental results.