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Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure ( Quantum Dot Structures)
Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure ( Quantum Dot Structures)
1997
Kanji Yoh
Jun Konda
Sanshiro Shiina
Norihiko Nishiguchi
Keywords:
Atomic physics
Effective mass (solid-state physics)
Quantum dot
Materials science
High-electron-mobility transistor
Optoelectronics
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