Enhancing Long‐Term Device Stability Using Thin Film Blends of Small Molecule Semiconductors and Insulating Polymers to Trap Surface‐Induced Polymorphs

T.S. and A.C. contributed equally to this work. This work was funded by the Spanish Ministry projects (FANCY CTQ2016‐80030‐R, GENESIS PID2019‐111682RB‐I00, PID2019‐110907GB‐I00, MICIUN/FEDER RTI2018‐095460‐B‐I00 and MAT2016‐77852‐C2‐1‐R (AEI/FEDER, UE)) the Generalitat de Catalunya (2017‐SGR13, 2017‐SGR‐918 and 2017‐SGR668) and the Spanish Ministry of Economy and Competitiveness, through the “Severo Ochoa” Programme for Centers of Excellence in R&D (SEV‐2015‐0496) and “Maria de Maeztu” program for Spanish Structures of Excellence (MDM‐2017‐0767). The authors also thank the European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska‐Curie grant agreement No 811284 (UHMob). They also acknowledge access to supercomputer resources as provided through grants from the Red Espanola de Supercomputacion. T.S. acknowledges the H2020‐MSCA‐COFUND‐2014 Programme (P‐SPHERE, Grant agreement 665919). A.B. thanks the Spanish Government financial support through BES‐2016‐077519 FPI fellowship. This work was carried out within the framework of the doctoral program (Ph.D.) of Material Science (Department of Physics and Chemistry) of the Universitat Autonoma de Barcelona (UAB). Y.G. is thankful to the Belgian National Fund for Scientific Research (FNRS) for financial support through research projects BTBT no. 2.4565.11, Phasetrans no. T.0058.14, Pi‐Fast no T.0072.18, and 2D to 3D no. 30489208. Financial support from the French Community of Belgian (ARC no. 20061) is also acknowledged. G.S. acknowledges postdoctoral fellowship support from the FNRS. The authors acknowledge Dr. Gemma Rius and CNM‐IMB for the access to the Raman facility.