Development toward Wafer-Scale Graphene RF Electronics

We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Siface SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10-13 cm2 at room temperature and had mobility of ~ 1500 cm2 V-1 s-1 or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al2O3) gate dielectric layer. DC and RF performance of the world's first epitaxial graphene RF FETs is presented.