MOCVD for complex multicomponent thin films—a leading edge technology for next generation devices

Abstract In the silicon industry new materials and particularly, their deposition methods have become a fundamental integral part to enable next generations of highly integrated devices. Especially in the field of volatile and non-volatile memory applications as well as in integrated capacitor devices for high-frequency applications existing technologies generate an increasing demand for new advanced innovative solutions to further follow “Moore's law” in the near future. Amongst available film growth technologies, metal organic chemical vapor deposition (MOCVD) basically offers unique combination of composition controllability, high uniformity over large areas, high throughput, and last but not least a high degree of conformality over 3D structures. However, MOCVD of complex materials was in the past often confronted with an absence of appropriate metal organic precursors and MOCVD-tools. This work provides an overview of some of the latest achievements in the field of MOCVD of complex oxides and electrode materials using novel MOCVD deposition methods and tools. It proves that there now exist mature deposition methods with the high degree of reliability and reproducibility mandatory for production.