Multi-Gate SOI MOSFET Operations in Harsh Environments

Weize Xiong,C.R. Cleavelin,Che Hua Hsu,Mike Ma,T. Schulz,Klaus Schruefer,P. Patruno,Jean-Pierre Colinge

Multi-Gate SOI MOSFET Operations in Harsh Environments

2007

Weize Xiong
C.R. Cleavelin
Che Hua Hsu
Mike Ma
T. Schulz
Klaus Schruefer
P. Patruno
Jean-Pierre Colinge

This paper reviews MuGFET (multi-gate MOSFET) devices performance under extreme temperature range (5-573 K) and total radiation dose up to 6 Mrad. It is concluded that MuGFET is not only a good platform for CMOS scaling, but also an excellent platform for operation in harsh environments.

Keywords:

Electronic engineering
Silicon on insulator
Radiation
MOSFET
Electrical engineering
CMOS
Engineering
cmos scaling
radiation dose
Optoelectronics
extreme temperature
high temperature electronics
gamma ray irradiation

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