Temperature and field dependence of intergrain barriers in polycrystalline n‐InSb films

Field‐effect Hall mobility studies were made on polycrystalline n‐type InSb films. The intergrain barrier potential is found to be dependent on both temperature and applied gate field. The experimental results fit well with an intergrain barrier potential of the form φb = φ0(1+αT)(1+αq+bq2), where φ0 is the value of φb at zero gate field and absolute zero temperature, α is the temperature coefficient of φb, and a and b are constants.