Growth of Mn-Bi films on Si(111): Targeting epitaxial MnBi

MnBi is of high interest for application as active layer in magneto-optic data storage media for several decades. Here the molecular-beam-epitaxy growth of Mn-Bi films on Si(111) surfaces is investigated under ultrahigh vacuum conditions by means of reflection high-energy electron diffraction, low-energy electron diffraction with spot-profile analysis, Auger-electron spectroscopy, magneto-optic Kerr spectroscopy, and transmission electron microscopy to reveal the microscopic film structure, film composition, and magnetic properties. The film parameters and growth protocols are varied but none of the chosen conditions lead to the formation of MnBi from the two elements. The affinity of Mn to the substrate material Si must be regarded as major reason for the fact that no MnBi forms.