Optical properties of InP epilayers grown on (1 1 1)B GaP substrates by metalorganic chemical vapor deposition

Abstract Heteroepitaxy of InP on GaP by low pressure metalorganic chemical vapor deposition is reported. The samples have a mirror-like surface as seen by the naked eye. The photoluminescence excitation measurements demonstrate that the heteroepilayers are under biaxial compressive strain in the surface parallel direction. The efficient photoluminescence and the full width at half maximum of the photoluminescence exciton peak for the 5000 A thick layer compared with that of InP homoepitaxy show that high-quality InP on GaP (1 1 1)B oriented substrates can be obtained. These results are superior to those reported previously for the InP/Si.