InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.