Photo-conductive hydro-fluorinated amorphous silicon carbide produced by using intermediate species SiF2

Abstract A new type of glow discharge hydro-fluorinated amorphous silicon carbide (a-SiC:F:H) is produced by mixing CH 4 or CF 4 with gas mixture of H 2 and intermediate species SiF 2 . Boron and phosphorus are doped onto this a-SiC:F:H by mixing B 2 H 6 and PH 3 with the above mixture gas. It is found that the optical band gap of a-SiC:F:H can be increased up to 2.2eV without degradation of photo-conductive properties by increasing carbon content, and also that the conductivity of impurity doped a-SiC:F:H can be increased to a level higher than that of the similar hydrogenated amorphous silicon carbide (a-SiC:H) which is produced by CH 4 and SiH 4 gas mixture.