Spin-flip Raman scattering in submonolayer CdSe/ZnSe structures

Abstract We have used spin-flip Raman scattering in magnetic fields up to 14T to investigate g -factors and exchange constants of excitons related to a submonolayer insertion of CdSe in a ZnSe matrix. Sharp spectral signatures are obtained for excitation within the inhomogeneously broadened luminescence. The observed g factors are close to those of bulk ZnSe, a fact which is of particular relevance when considering the different models for the nature of excitons near submonolayer insertions and their microscopic structure (islands, homogeneous alloys, self-organized quantum dots). In measurements for different magnetic field directions we identify a “dark” (dipole-forbidden) exciton peak. Its exchange splitting from the dipole-allowed exciton increases linearly with the localization energy of the CdSe-related excitons.