The diffusion of ion−implanted boron in silicon dioxide

In this work we report a detailed SIMS analysis of the diffusion of ion implanted B in SiO2. Using the joined half Gaussian approximation to the initial B profile the diffusion of B has been modeled for temperatures of 1050° to 1200°C. A fast diffusing tail has been observed for diffusion temperatures below 1050°C. A method is suggested to minimize this ‘‘tail’’ diffusions.