Quantum anomalous Hall effect with Landau levels in nonuniformly strained silicene

We propose a quantum anomalous Hall (QAH) effect with Landau levels in silicene under a nonuniform strain. By applying both a perpendicular electric field and an exchange field, silicene enters a valley-polarized phase first. Then, an arc-shaped strain is used to drive the silicene to a quantum anomalous Hall effect. Landau levels and edge states are numerically obtained in the band structure of a zigzag ribbon. Two-terminal conductance and four-terminal Hall conductance exhibit correspondence plateaus that are robust against nonmagnetic and magnetic impurities. This scheme provides a new platform to search for QAH phases at high temperatures and with multiple edge channels.We propose a quantum anomalous Hall (QAH) effect with Landau levels in silicene under a nonuniform strain. By applying both a perpendicular electric field and an exchange field, silicene enters a valley-polarized phase first. Then, an arc-shaped strain is used to drive the silicene to a quantum anomalous Hall effect. Landau levels and edge states are numerically obtained in the band structure of a zigzag ribbon. Two-terminal conductance and four-terminal Hall conductance exhibit correspondence plateaus that are robust against nonmagnetic and magnetic impurities. This scheme provides a new platform to search for QAH phases at high temperatures and with multiple edge channels.