Hot-electron emission from n-silicon

Abstract Hot-electron emission has been obtained from 70 Ω-cm n -Si after treating the emitting surface with caesium to lower the electron affinity. Saturated emission currents rising to a maximum of 2.57 mA/cm 2 in fields up to 57 kV/cm were measured. Empirical values of electron temperature have been calculated from the measured emission using the Richardson-Dushman equation and the results compared with electron temperatures calculated from a theoretical formula given by Stratton.