Silicon‐based light emitting diode material studied under high pressure

The influence of pressure up to around 30 kbar on the photoluminescence (PL) of material from a silicon light-emitting diode (LED) that operates efficiently at room temperature is reported for the first time. The observed PL peak at 1140 nm shifts to lower energy at a rate of -1.4 ± 0.1 meV/kbar. The value of this shift agrees with earlier absorption measurements on the indirect band-gap of silicon, confirming that the emission is closely related to this transition. This peak shows an increase in intensity from low to room temperature and peak position temperature results are compared to other sources.