Dose-rate dependence of radiation-induced interface trap density in silicon bipolar transistors

Abstract The key effects of ionizing radiation on silicon dioxide are described and computed. Inclusion of bimolecular electron–hole recombination is shown to produce a saturation of fixed charge at high total dose and to a reduction in interface trap density at high dose-rates. These results can explain the enhanced low dose rate sensitivity (ELDRS) phenomenon. These results also predict a new dose-rate dependence at very high dose rates.