The Stripping Behavior of High-Dose Ion-Implanted Photoresists in Supercritical CO2 Formulations

The complete and effective stripping of high-dose ion-implanted photoresist (HDI PR) in IC manufacturing has become more challenging as the level of photoresist has increased while the allowable material loss and surface damage has decreased with the chip size downscaling. The heavily implanted photoresist is extremely difficult to be removed because an amorphous carbonized crust is formed due to the reaction of the implanted cation with the photoresist poly