High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine

Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH/sub 2/) is reported. The 1 mu m gate FETs have a maximum extrinsic transconductance of 135 mS/mm and an output transconductance of 5.5 mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from S-parameter measurements. DC and microwave characteristics of t-BuAsH/sub 2/ grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH/sub 3/.