Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar

Abstract This paper reports on the large area growth of GaInAsP/InP structures for 1.3 and 1.55 μm applications in a LP-MOVPE system at 20 mbar, at conditions comparable to those used for GaInAs and InP. The effects of the partial pressures and temperatures on growth rate and composition were studied. The composition along 2 inch wafers can be adjusted within 2%, the peak emission wavelength of 1.3 and 1.55 μm material within 30 nm. The FWHM of the photoluminescence peak at 300 K amounts to 48 nm and at 4 K to 7 nm. The FWHM of X-ray curves is below 23 arc sec. Thickness uniformity is better than 2%. Mobilities of 45,406 cm 2 /V·s (1.55 μm GaInAsP) at n =1×10 15 cm −3 were obtained. Intentional n-type doping of GaInAsP in the range 10 16 n 19 cm −3 was realized using H 2 S. With thin intentionally doped InP layers in GaInAsP/InP structures, a two-dimensional electron gas was generated at the heterointerface with a constant mobility μ 77 =58.300 cm 2 /V·s is the GaInAsP between 50 and 4 K.