Radiation hard design of HfO2 based 1T1R cells and memory arrays

In this work the electrical performance of a Rad- Hard designed 1T-1R device based on the combination of an Enclosed Layout Transistor (ELT) and a TiN/HfO 2 /Ti/TiN based resistor is presented for the first time. Moreover, an architectural solution for 1Mbit radiation hard RRAM array implementation is proposed.