Growth of thick ZnO films by metal-source vapor phase epitaxy

Metal-Source Vapor Phase Epitaxy (MVPE), which takes advantage of the reaction of Zn vapor and H2O vapor at high temperature, was employed to grow thick epitaxial ZnO films on c-sapphire substrates. This method exhibits high growth rate (>120μm/h), good crystallinity and thickness uniformity. A re-growth method is used to control the polarity of ZnO films and both Zn-polar and O-polar samples are obtained. The structural and electric properties and morphology of the samples were characterized by X-ray diffraction (XRD), Hall measurements and scanning electron microscope (SEM), respectively. The samples' polarities were identified by wet etching method. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)