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A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method
A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method
2015
Matsuzaki Takanori
Onuki Tatsuya
Nagatsuka Shuhei
Inoue Hiroki
Ishizu Takahiko
Ieda Yoshinori
Sakakura Masayuki
Atsumi Tomoaki
Shionoiri Yutaka
Kato Kiyoshi
Okuda Takashi
Yamamoto Yoshitaka
Fujita Masahiro
Koyama Jun
Yamazaki Shunpei
Keywords:
Non-volatile memory
Oxide
Crystal
CMOS
Electronic engineering
Materials science
Computer hardware
Electrical engineering
Optoelectronics
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