Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

Abstract We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545 °C during growth ensures optimal SCQD nucleation on square arrays from 200 nm up to 10 μm period. The SCQDs exhibit a small inhomogeneous broadening of the ensemble emission and a rather narrow single SCQD linewidth. We used a scalable alignment technique to integrate the SCQDs into a p–i–n diode and observe electroluminescence of a single SCQD with a linewidth of 400 μeV.