Homoepitaxial boron‐doped diamond with very low compensation

Homoepitaxial boron-doped diamond layers grown by chemical vapor deposition on (100)-oriented substrates are studied by Hall effect and resistivity measurements as a function of the temperature. In the range of 140–600 K, the hole concentration is well described by the neutrality equation in the regime of very low compensation, with the characteristic Ei/2 activation energy, where Ei is the ionization energy of boron acceptors. It indicates that the residual donor concentration is extremely low in the layers (<1013 cm−3).