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Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs
Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs
2015
Takahito Kojima
Shinsuke Harada
Yusuke Kobayashi
Mitsuru Sometani
Keiko Ariyoshi
Junji Senzaki
Manabu Takei
Yasunori Tanaka
Hajime Okumura
Keywords:
Electromagnetic shielding
Materials science
Trench
Composite material
Correction
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