Ion-implanted static induction transistors in 4H-SiC

This paper reports the first demonstration of ion-implanted 4H-SiC static induction transistors (SITs) for microwave power generation in L and S bands. Ion implanted SITs were measured with 35 W output power at L-band (1.3 GHz) with an associated gain of 7 dB, drain efficiency of 52%, and power density of 15.5 W/cm. Technologies developed to enable the fabrication of this device include blanket nitrogen implantation for N/sup +/ contacts, and selective aluminum implantation for sub-micron p-n junction gate formation.