Optimization of laser-patterning process and module design for transparent amorphous silicon thin-film module using thin OMO back electrode

Abstract Transparent hydrogenated amorphous silicon thin-film solar modules are fabricated using oxide-metal-oxide (OMO) electrodes as the back electrode for building-integrated photovoltaic applications. The outer aluminum-doped zinc oxide and inner silver layers constitute a thin OMO electrode (~110 nm thick), exhibiting a sheet resistance of 6.8 Ω/□ and an average transmittance of ~88% in the visible range of 400–800 nm. The external quantum efficiency and average transmittance of the cell were investigated for the absorber-layer thickness using the finite-difference time-domain method, and it was found that the optical loss in the cell was mainly due to the absorption of the front electrode in the ultra-violet region and free-carrier absorption of the OMO in the infrared region. Fabrication issues are introduced for a 532 nm short-pulse high-power laser patterning process for transparent modules with thin OMO electrodes. Optimization of the laser power for the P2 and P3 laser processes is demonstrated by observing the profiles and measuring the shunt resistance of the laser-patterned edges. Furthermore, the cell width is optimized based on an equivalent circuit model using PSpice simulation. The highest module efficiency and average transparency achieved in the range of 500–800 nm were 5.6% and 15.2%, respectively. The short-circuit current density, fill factor, and open-circuit voltage per cell of the module were found to be 10.8 mA/cm2, 62.7%, and 0.830 V, respectively.