Bi2Te3 계 열전 반도체 후막의 열전물성

Thermoelectric properties of Bi₂Te₃-base thick films were studied in order to obtain the optimum manufacturing conditions;binder contents, sintering temperature and time, and amounts of dopants. Blank screen printing and subsequent sintering process were proved to be suitably; for the fabrication of thick films, if the fine powders(◎2㎛)were mixed with 18% of the binder;propylene glycol 3wt% and ethyl alcohol 15wt%. The thick films of intrinsic Bi₂Te₂ were found to have n-type property and the figure of merit of 4.25×10^(-4)K^(-1) when doped with 4 at.% Se and sintered at 450℃ for 4 hrs. The figure of merit of sintered p-type Bi_(0.5)Sb_(1.5)Te₃ and n-type Bi₂Te₂Se_(0.3) with 10 at% Sb increased as the sintering temperature became higher;the former showed maximum values of 5.96×10^(-4)K^(-1) when sintered at 550℃ for 4 hrs, and the latter could be reached to 4.62×10^(-4)K^(-1) when sintered at. 525℃ for 4 hrs.