Study of the morphology of Ge quantum dots grown by liquid phase epitaxy

This paper reports the results of a study of the morphology of Ge quantum dots (QDs) grown by liquid-phase epitaxy on Si substrate with orientation (111) while applying pulsed cooling of the substrate. The morphology of the structures with QDs is studied by atomic force microscopy. The QDs are grown by applying a different number of cooling pulses – 1, 3, 5 and 10, with a difference in the temperature between the substrate and the heat absorber ΔT D = 5 °C. The effect is studied of the different technological conditions on the size of the Ge QDs and the density of their distribution.