GaAs/InGaAs Optoelectronic Switch for Triple-Logic Applications

A new GaAs/InGaAs triangular barrier optoelectronic switch combined with tri-state characteristic is fabricated and demonstrated. Two GaAs/InGaAs barriers are employed to provide potential barriers for electron thermionic emission and hole confinement, respectively. Applying a sufficient DC voltage to this device, a double S-shaped negative differential resistance (NDR) phenomenon with nearly equal switching voltage difference is appeared at room temperature. This unique NDR property can be introduced to triple stable regions into the device circuit design. Based on a proper circuit design with suitable load line, the studied device has potential for triple-logic applications.