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NO窒化処理を施したSiO₂/SiC界面近傍の窒素分布評価 (シリコン材料・デバイス)
NO窒化処理を施したSiO₂/SiC界面近傍の窒素分布評価 (シリコン材料・デバイス)
2019
takuzi hosoi
Kidist Moges
man someya
kou kou simura
sinsuke harada
heizi watanabe
Keywords:
X-ray photoelectron spectroscopy
Nuclear chemistry
Materials science
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