Comparison of plasma doping and beamline technologies for low energy ion implantation

The trend towards shallower junctions especially in high dose applications, for example source drain extensions, results in significant challenges for ion implantation. Satisfying increasingly stringent device performance requirements, such as energy purity, dose uniformity and implant angle control, runs counter to maintaining adequate productivity with beamline systems. The limitations of beamline implant are discussed and compared with the capabilities of plasma doping technologies to address these requirements. Recent changes in the trend towards commercialization of plasma doping are summarized.