Investigating reliability attributes of silicon photodetectors

Abstract The electrical parameters of silicon detectors were measured under various external influences (temperature cycling, humidity, salt atmosphere, etc.). The testes were designed and the data was analyzed by using the randomized block design method (implementing the software package SAS). To estimate the lifetime of the detectors, an accelerated life test was implemented. Using plots of inspected interval data based on the maximum likelihood technique (implementing the software package CENSOR), it was found that the Weibull distribution fits the lifetime test data. Calculating the cumulative distribution function and the acceleration factor, the median lifetime of the silicon detector at room temperature was 8.936 × 10 6 hours and the confidence interval with 95% probability was (7.155–10.575) × 10 6 hours.