A Computational Performance Evaluation of Negative-Capacitance MOSFETs based on Ultra-thin body Silicon and Monolayer MoS 2

A computational study at atomic level was performed for negative-capacitance MOSFETs (NC-FETs) with ultrathin body silicon (UTB-Si) and monolayer MoS 2 as channel materials and HfO 2 as ferroelectric layer material. $\sim 25$ mV/dec average subthreshold slope $( SS)$ for at least 4-order current was observed in MoS 2 NC-FET and shows steeper slope comparing to the Si cases, which is attributed to both tunneling current and negative capacitance effect. Based on our investigation, 1L-MoS 2 FEFETs could be the candidate for low-power application (LP) in next generation FETs.