A 50-GHz 0.25-/spl mu/m high-energy implanted BiCMOS (HEIBiC) technology for Low-Power high-integration wireless-communication systems

A 0.25-/spl mu/m modular high-energy implanted BiCMOS (HEIBiC) technology has been developed for high-integration wireless-communication systems. It integrates an RF bipolar transistor into the CMOS process without disturbing the CMOS device characteristics. HEIBiC technology utilizes implantation to form the base, collector and CMOS tubs. This single-poly emitter npn transistor demonstrates an f/sub T/=52 GHz for 2.5 V devices and an f/sub T/BV/sub CEO/ product of 171 GHz-V for 3.3 V devices. The performance of HEIBiC technology is competitive with the best reported in the literature.