Silicon material that can be used in thin film manufacturing method and method

As the thin film is formed on the substrate 21 is deposited on the substrate 21 at a predetermined deposition position 33 in the vacuum flying particles from the evaporation source 9. Together are dissolved rod-like material 32 containing the raw material of the thin film above the evaporation source 9 is supplied to the evaporation source 9 the dissolved material in the form of droplets 14. As the rod-like material 32, toward the outer periphery from the center in a cross section perpendicular to the long axis direction of the material 32, the length of 90% of the positions, respectively there are a plurality of first regions surrounded by grain boundaries, It is not less 200μm or less major axis of the area weighted average of a plurality of first regions, and, toward the outer periphery from the center, the length of 50% of the positions, a plurality of second region surrounded by the respective grain boundaries exist, the major axis of the area weighted average of a plurality of second regions is 1000μm or more, a silicon material of the rod-shaped.