Preparation and Photoelectrochemical Properties of Bi2MoO6 Films

Abstract Bi 2 MoO 6 films on ITO glass substrates were prepared from amorphous complex precursor by dip-coating technique. The relationships between conditions of preparation, structures, morphologies, and photoelectrochemical properties of Bi 2 MoO 6 films were investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), laser Raman spectroscopy (LRS), diffuse reflectance spectroscopy (DRS), photocurrent-action curves, and incident photon-to-current conversion efficiency (IPCE). Bi 2 MoO 6 films calcined at 500 °C for 1 h were the γ-Bi 2 MoO 6 phase, and Bi 2 MoO 6 nanoparticles grew along (131) plane. The thickness of the films obtained was about 69 nm. The size of Bi 2 MoO 6 nanoparticles increased with rising calcination temperature and extension of calcination time; in addition, γ-Bi 2 MoO 6 changed into β -Bi 2 MoO 6 and γ′ -Bi 2 MoO 6 at 525 °C. Bi 2 MoO 6 films had visible-light response, and detectable photocurrent was generated under visible-light (λ>400 nm) irradiation. The IPCE of the optimized Bi 2 MoO 6 films was 2.14% at 400 nm. The photocurrent density and IPCE could be controlled by modifying the surface structure of Bi 2 MoO 6 films, which could be achieved by changing the preparation conditions.