Method for manufacturing solar cell having high photoelectric conversion efficiency, and solar cell having high photoelectric conversion efficiency

Disclosed is a solar cell manufacturing method characterized by having: a step for preparing a semiconductor silicon substrate, which has an electrode that is formed at least on one main surface by firing an electrode precursor, and which has a PN junction, said semiconductor silicon substrate being at a temperature below 100°C; and a step for annealing the semiconductor silicon substrate at a temperature not below 100°C but not above 450°C. Consequently, the method for manufacturing the solar cell wherein a deterioration phenomenon is suppressed is provided, said deterioration phenomenon being the phenomenon where solar cell output deteriorates when the solar cell is left as it is at a room temperature in the air.