High-Performance van der Waals Metal-Insulator-Semiconductor Photodetector Optimized with Valence Band Matching

2D van der Waals heterostructures (vdWHs) based metal‐insulator‐semiconductor (MIS) photodetectors are currently attracting enormous research interest. The control of barrier height in vdWHs MIS photodetectors is investigated here to break the photodetection limit of high barrier height. The graphene/h‐BN/SnS2 device with ignorable barrier height shows the best photodetection performance compared to the other common 2D semiconductors devices.