Computational analysis of wafer temperature non-uniformity in MOVPE system

Temperature distribution of an epitaxial wafer in an MOVPE system has been examined by using the computational heat conduction analysis in order to clarify the temperature difference between the wafer center and the wafer edge region. The system is based on a high-speed rotating disk type multiple wafer reactor. Finite volume method is used for the computation on the steady three-dimensional model with unstructured grid. By introducing the concept of the thermal contact resistance between an InP wafer and a wafer carrier, calculation result is in good agreement with the real epitaxial growth that wafer temperature is high in wafer edge region. It indicated that the heat from the surface of the wafer carrier through the gas over the wafer causes the high temperature in the wafer edge region.