Unit nonvolatile memory device and nonvolatile memory device having means

Disclosed herein is a unit capable of improving the reliability of a nonvolatile memory device, and a nonvolatile memory device having means by which to enhance data sensing margin in a read operation. The nonvolatile memory cell device comprising: an antifuse having a first terminal between an input terminal and an output terminal; and a first switching member, which is coupled to the second terminal and a ground voltage terminal antifuse between.