Generation of high repetition frequency subpicosecond pulses at 1.535 /spl mu/m by passive mode-locking of InGaAsP/InP laser diode with saturable absorber regions created by ion implantation

Summary form only given. We report obtaining optical pulses 0.64 ps wide at a 104 GHz repetition rate from a passively mode-locked InGaAsP/InP laser diode. The laser emission spectrum corresponds to the amplification band of erbium-doped fiber amplifiers.