Monolithically integrated transceiver chips for bidirectional optical interconnection

We report on the design, fabrication and test results of monolithically integrated transceiver chips consisting of GaAs metal-semiconductor-metal photodiodes and 850nm wavelength vertical-cavity surface-emitting lasers. These chips are well suited for low-cost and compact bidirectional optical interconnection at Gbit/s data rates in mobile systems and industrial or home networks employing large core size multimode fibers.