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Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy
Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy
2020
Erik Rosseel
Clement Porret
Andriy Hikavyy
Roger Loo
Matteo Tirrito
Bastien Douhard
Olivier Richard
Naoto Horiguchi
Rami Khazaka
Keywords:
Epitaxy
Electrical resistivity and conductivity
Optoelectronics
Doping
Materials science
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