Annealing of selenium‐implanted GaAs

The electrical and structural properties of 1×1014 Se+ cm−2, 100–400 kV and 5×1012 Se++ cm−2, 350‐kV implants into (100) semi‐insulating GaAs have been studied. Peak carrier concentrations of 5×1018 cm−3 have been measured and mobilities >4000 cm2 V−1 s−1 obtained for low‐dose implants (n=1–2×1017 cm−3) by annealing samples on a graphite strip heater. Si3N4 and AlN have been used as encapsulants. Comparisons are made with capless annealing in an arsine ambient.