Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature
2018
While recent work developing GaAsBi for opto-electronic applications has shown promise, it has also indicated that the large valence band offset of GaAsBi/GaAs may cause undesirable hole-trapping in GaAsBi quantum wells. In this work, hole-trapping is demonstrated to be the cause of the reduced depletion width of GaAsBi/GaAs multi-quantum well solar cell devices under illumination. Modelling of the quantum confinement energies in these devices shows how the carrier escape times vary as functions of temperature, providing a tool for the design for future GaAsBi based photovoltaic devices.
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